Brevis Momecular trabem EPITAXY (MBE)
In technology de M. trabem epitaxy (MBE) erat developed in 1950s parare semiconductor tenuis film materiae usura vacuum evaporation technology. Cum progressionem de ultra-excelsum vacuo technology, applicationem de technology est extenditur in agro Semiconductor scientia.
In motivation de semiconductor materiae investigationis est in demanda novum cogitationes, quae potest amplio perficientur de systematis. Et rursus, novum materiam technology potest producendum novum apparatu et novi technology. Molecular trabem epitaxy (MBE) est summus vacuo technology ad epitaxial layer (plerumque semiconductor) incrementum. Non utitur calor trabem de fonte atomis aut moleculis impacting unum crystallum subiectum. In ultra-alta vacuo characteres processus patitur in-situ metallization et incrementum insulating materiae in nuper crevit semiconductor superficiei, unde in pollutio, liberum interfaces.
Mbe Technology
Molecular trabem epitaxy fuit ferri ex in excelso vacuo vel ultra-excelsum vacuo (I x X-8PA) environment. Maxime rationem mocecular trabem epitaxy est eius humilis depositionem rate, quod plerumque concedit film ad epitaxial crescere ad rate minus quam MMM NM per hora. Tales humilitatem depositionem rate postulat excelsum satis vacuo ad consequi eadem plano munditia ut alia depositione modi.
Ad occursum ad ultra-alta vacuo descripsit supra, in MBE fabrica (Knudsen cell) habet refrigerationem iacuit, et ultra-alta vacuo environment de incrementum circulationem debet esse usura Liquid NITROGENIUM elit. Liquid Nitrogen refrigerari in fabrica internum temperatus ad LXXVII Kelvin (-196 ° C). Et humilis temperatus environment potest amplius reducere contentus de impudicitiis in vacuo et providere melius condiciones ad depositionem tenui films. Ideo a dedicated liquidum NITROGENIUM Refrigerant circulationem ratio non requiritur ad MBE apparatu providere continua et stabilis copia -196 ° C liquid nitrogen.
Liquid NITROGENIUM Refrigerant Circulationem System
Vacuum Liquid NITROGENIUM Refrigerant Ratio maxime includit,
● Cryogenic tristique
● Main et genere vacuo Jacketed pipe / vacuo tuniced caligas
● MBE Special tempus SEPARATOR et vacuo Jacketed exhaurit pipe
● variis vacuo Jacketed Valvulae
● Gas, liquid obice
● vacuo Jacketed Filter
● Dynamic vacuo sentinam ratio
● Precooling et Purgate Reheating System
HL Cryogenic Equipment Company est animadvertit de MBE MBE Liquid NITROGENIUM Refrigerant Ratio, Organized Technical Techbone ad feliciter develop a speciali MBE Liquid NITROGENIUM ORDAING System MBE Technology et integram paro of Vacuum InsulatedPiping systematis, quae est in multis conatibus, universities et investigationis institutorum.
HL Cryogenic Equipment
HL Cryogenic apparatu, qui in MCMXCII est notam affiliatus ad Chengdu sanctus cryogenic apparatu company in Sinis. HL Cryogenic apparatu committitur ad consilium et artifice in excelsum vacuo insulatas cryogenic pavoris system et related suscipio apparatu.
Nam magis notitia, placere visitare rutrumwww.hlcryo.com, Aut inscriptio estinfo@cdholy.com.
Post tempus: May-06-2021
